M04600 - SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling StdPbc-0326 org in July 2003

org in July 2003

SEMI E12-88 (first published)

specifically for serial identification of flatted and notched silicon wafers

homogeneous layers of

M04600 - SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling StdPbc-0326 org in July 2003NOTICE: This Document was reapproved with minor editorial changes. The purpose of this Document is to specify a method to measure the carrier concentration and carrier concentration vs. depth profile of epitaxial layers by electrochemical capacitance voltage (ECV) profiling. This Test Method covers a procedure for measuring the carrier concentration of epitaxial layers by ECV profiling. This method focuses on improving the accuracy and repeatability